193 nm lithography with ultrathin surface imaging resist systems

Charles S. Dulcey; Tim S. Koloski; Walter J. Dressick; Mu-San Chen; Jacque H. Georger Jr.; Jeffrey M. Calvert

doi:10.1117/12.154800

15 September 1993 193 nm lithography with ultrathin surface imaging resist systems

Charles S. Dulcey, Tim S. Koloski, Walter J. Dressick, Mu-San Chen, Jacque H. Georger Jr., Jeffrey M. Calvert

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154800
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Deep UV photochemical patterning of chemisorbed metal-binding (ligating) organosilane films has been previously used to demonstrate sub-0.5 micrometers patterned additive metallization by electroless deposition. Significant photospeed advantages have now been obtained using a two step process in which an organosilane film is first patterned and then functionalized to impart the ability to metallize. This is achieved by photochemical patterning of a film which lacks a ligating group, but which is optimized for photospeed. The pattern of chemical functions so created is then reacted with an organic ligand which selectively places the ligand functionalities on the surface. Treatment with an aqueous Pd catalyst followed by electroless plating deposits metal in patterns defined by the irradiation step. Using several chemical approaches based upon this concept, metal patterns have been fabricated to 0.5 micrometers feature width at doses of 50 mJ/cm² at 193 nm.

Citation Download Citation

Charles S. Dulcey, Tim S. Koloski, Walter J. Dressick, Mu-San Chen, Jacque H. Georger Jr., and Jeffrey M. Calvert "193 nm lithography with ultrathin surface imaging resist systems", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154800

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