Effects of illumination system aberrations on proximity XRL images

Jerry Z.Y. Guo; Jiabei Xiao; Franco Cerrina; Whitson G. Waldo

doi:10.1117/12.146516

24 June 1993 Effects of illumination system aberrations on proximity XRL images

Jerry Z.Y. Guo, Jiabei Xiao, Franco Cerrina, Whitson G. Waldo

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146516
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The aberrations of a typical condenser system for proximity X-ray lithography are obtained through ray-tracing and their effect on the overlay and linewidth control is analyzed. The main effect of the illumination systems aberrations is run-out error due to the slope of the wavefront aberration and the error is of the order of 2 nm.

Citation Download Citation

Jerry Z.Y. Guo, Jiabei Xiao, Franco Cerrina, and Whitson G. Waldo "Effects of illumination system aberrations on proximity XRL images", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146516

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