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Cr4+:Mg2SiO4 crystals have been grown by a Czochralski method with a radio frequency generator of 150 KHz. The ambient gas is a mixture of N2 + O2 of total pressure 1.4 atm.. The oxidizing atmosphere is employed to promote the Cr4+ concentration in the crystal. A special growth procedure is adopted and the outer surface of the Ir crucible is coated with a ZrO2 layer to reduce Ir consumption. The primary laser testing has been operated using Q-switch Nd:YAG laser as a pumping source. The maximum output energy is 11.5 mJ for 70 mJ incident energy. The laser wavelength can be tuned from 1167 nm to 1332 nm. The second harmonic generation with BBO crystal as a frequency doubler results in 584 nm to 666 nm laser beams.
Yinchun Hou,Hongbin Zhu,Shenghui Yan,Siting Wang, andBing Hu
"Growth of Cr4+:Mg2SiO4 crystal by Czochralski method", Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); https://doi.org/10.1117/12.149264
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Yinchun Hou, Hongbin Zhu, Shenghui Yan, Siting Wang, Bing Hu, "Growth of Cr4+:Mg2SiO4 crystal by Czochralski method," Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); https://doi.org/10.1117/12.149264