Paper
14 July 1993 Far-infrared nonlinear response of electrons in semiconductor nanostructures
Mark S. Sherwin, N. Asmar, William W. Bewley, Keith Craig, C. L. Felix, B. Galdrikian, Elisabeth G. Gwinn, Andrea G. Markelz, Arthur C. Gossard, P. F. Hopkins, Mani Sundaram, Bjorn Birnir
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Proceedings Volume 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science; (1993) https://doi.org/10.1117/12.148044
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Electrons in semiconductor nanostructures such as quantum wells can exhibit a highly nonlinear response to far-infrared radiation of sufficient intensity, such as can be supplied by the free-electron lasers (FELs) at UCSB. Several different physical mechanisms can cause nonlinear behavior in nanostructures. Experimental results at UCSB demonstrate that transport, absorption, and harmonic generation can be used as probes of nonlinear response. In the future, it may be possible to use the UCSB-FELs to observe completely new nonlinear phenomena, such as non-perturbative quantum resonances in quantum wells driven by intense far-infrared radiation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark S. Sherwin, N. Asmar, William W. Bewley, Keith Craig, C. L. Felix, B. Galdrikian, Elisabeth G. Gwinn, Andrea G. Markelz, Arthur C. Gossard, P. F. Hopkins, Mani Sundaram, and Bjorn Birnir "Far-infrared nonlinear response of electrons in semiconductor nanostructures", Proc. SPIE 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science, (14 July 1993); https://doi.org/10.1117/12.148044
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KEYWORDS
Electrons

Free electron lasers

Absorption

Quantum wells

Nanostructures

Heterojunctions

Semiconductors

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