Paper
23 July 1993 Intracavity and resonant external cavity laser frequency doubling using semiconductor heterostructures
Siegfried Janz, Hongxing Dai, F. Chatenoud, Michael M. Dion, Richard J. F. Normandin
Author Affiliations +
Proceedings Volume 1852, Nonlinear Optical Properties of Advanced Materials; (1993) https://doi.org/10.1117/12.148453
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Optical second-harmonic (SH) generation in nonlinear semiconductors can be used to convert infrared radiation from semiconductor laser sources to visible light. The high incident light intensities and spatial modulation of the linear and nonlinear optical properties occurring in AlxGa1-xAs vertical cavity heterostructures can lead to SH generation efficiencies many orders of magnitude larger than possible homogeneous GaAs. SH generation in vertical cavity heterostructures is analyzed using a model incorporating multilayer reflections and spatially varying nonlinear sources.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siegfried Janz, Hongxing Dai, F. Chatenoud, Michael M. Dion, and Richard J. F. Normandin "Intracavity and resonant external cavity laser frequency doubling using semiconductor heterostructures", Proc. SPIE 1852, Nonlinear Optical Properties of Advanced Materials, (23 July 1993); https://doi.org/10.1117/12.148453
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KEYWORDS
Heterojunctions

Reflection

Gallium arsenide

Semiconductors

Modulation

Vertical cavity surface emitting lasers

Fabry–Perot interferometers

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