TE/TM mode switching of GaAsP strained quantum-well laser diodes

Hidenao Tanaka; Jun-ichi Shimada

doi:10.1117/12.146901

16 June 1993 TE/TM mode switching of GaAsP strained quantum-well laser diodes

Hidenao Tanaka, Jun-ichi Shimada

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146901
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

This paper demonstrates TE/TM mode switching in GaAsP/AlGaAs tensilely strained quantum-well laser diodes (LDs) with multiple electrodes. The quantum-well layers are grown by low-pressure metal organic vapor phase epitaxy. For a 250-micrometers -long cavity, the threshold current density of this LD wafer at room temperature is about 1.6 kA/cm². With a long cavity these LDs operate in the TM mode, but the TE mode dominates when the cavity is shorter than 200 micrometers . TE/TM mode switching is obtained in a two-electrode laser with electrodes 150 micrometers and 80 micrometers long. When current is injected into both electrodes this LD oscillates at 790 nm in the TM mode and with a threshold current of 40 mA. When current is injected only into the longer electrode, however, it oscillates at 800 nm in the TE mode and absorption at the region under the shorter electrode increases the threshold current to 80 mA. For both kinds of oscillation the suppression ratio is greater than 10 dB. This LD operates in the fundamental mode over an injection-current range of several milliwatts.

Citation Download Citation

Hidenao Tanaka and Jun-ichi Shimada "TE/TM mode switching of GaAsP strained quantum-well laser diodes", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146901

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