Measurement of relative intensity noise of semiconductor laser arrays

Jingchang Zhong; Baoren Zhu; Ronghui Li; Yingjie Zhao

doi:10.1117/12.146926

16 June 1993 Measurement of relative intensity noise of semiconductor laser arrays

Jingchang Zhong, Baoren Zhu, Ronghui Li, Yingjie Zhao

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146926
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

We report in this paper the measurement results of the relative intensity noise (RIN) in GaAs- AlGaAs laser arrays, comparing with that of single stripe lasers. The results are in agreement with the noise theory based on the rate equation. The experimental measurements include dependence of relative intensity noise on drive current, modulation frequency and temperature. The results confirm in these circumstances the theoretical prediction that the maximum of the relative intensity noise occurs when the lasers run exactly at their threshold current level.

Citation Download Citation

Jingchang Zhong, Baoren Zhu, Ronghui Li, and Yingjie Zhao "Measurement of relative intensity noise of semiconductor laser arrays", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146926

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