Effect of strain on 1.5-um quantum-well lasers

Yau Zou; Jules S. Osinski; Piotr A. Grodzinski; Paul Daniel Dapkus; William C. Rideout; Wayne F. Sharfin; F. David Crawford

doi:10.1117/12.146902

16 June 1993 Effect of strain on 1.5-μm quantum-well lasers

Yau Zou, Jules S. Osinski, Piotr A. Grodzinski, Paul Daniel Dapkus, William C. Rideout, Wayne F. Sharfin, F. David Crawford

Author Affiliations +

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146902
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Physical parameters contributing to the threshold current and its temperature characteristics of 1.5 micrometers semiconductor lasers have been separately measured in lattice matched and compressively strained lasers. It is found that the reduction of threshold current density in strained devices is attributed to the reduction of Auger recombination, intervalence band absorption and transparency carrier density brought about by the introduction of strain. It is also found that the temperature sensitivity of both lattice matched and strained devices is dominated by the strong differential gain change with temperature, instead of Auger recombination.

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Yau Zou, Jules S. Osinski, Piotr A. Grodzinski, Paul Daniel Dapkus, William C. Rideout, Wayne F. Sharfin, and F. David Crawford "Effect of strain on 1.5-μm quantum-well lasers", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146902

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