Paper
23 October 1992 Nonlinearity enhancement at boundary promoting spatial soliton emission
Changjun Liao, Dong-Ying Bee, Chung-Ji Li
Author Affiliations +
Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131260
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
Soliton switching based on spatial solution emission requires the cladding material has high enough nonlinear change of the index. We describe the design of a waveguide that has nonlinearity enhancement at the boundary due to deep level states excitation. The example material is the AlxGa1-xAs. This material has El2 related deep level states which become deeper as the AlAs mole fraction increases so that we can suitably choose the bandgap, and therefore the deep levels to match the working wavelength. The distribution of the guided mode field is also modified by the design of the waveguide geometry to facilitate an inner built electric field which is responsible for the nonlinearity enhancement.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changjun Liao, Dong-Ying Bee, and Chung-Ji Li "Nonlinearity enhancement at boundary promoting spatial soliton emission", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131260
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KEYWORDS
Waveguides

Spatial solitons

Electrons

Gallium arsenide

Cladding

Diffusion

Electro optics

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