High-refractive nonlinearity in heavily doped InP below the band edge

Sergey A. Bystrimovich; Fedor V. Karpushko; Ilya A. Utkin

doi:10.1117/12.147960

28 June 1993 High-refractive nonlinearity in heavily doped InP below the band edge

Sergey A. Bystrimovich, Fedor V. Karpushko, Ilya A. Utkin

Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147960
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus

Abstract

The high room temperature optical nonlinearity in heavily doped n-InP (n equals 10¹⁸ cm^-3) in the spectral region near the band edge has been investigated. The spectral and energy dependencies of the self-diffraction efficiency have been measured. The energy dependence of the transmission spectrum is also presented. The value of optical bleaching and the self-diffraction efficiency are shown to be strongly dependent on the wavelength of incident radiation. Preliminary estimations show that the nonlinear change of refractive index reaches the value of 0.002.

Citation Download Citation

Sergey A. Bystrimovich, Fedor V. Karpushko, and Ilya A. Utkin "High-refractive nonlinearity in heavily doped InP below the band edge", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147960

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