Paper
21 May 1993 Parylene as a conformal insulator for submicron multilayer interconnection
Xin Zhang, S. Dabral, B. J. Howard, Joseph Bica, Chien Chiang, V. Ochoa, P. J. Ficalora, Christoph O. Steinbruchel, H. Bakhru, Toh-Ming Lu, John F. McDonald
Author Affiliations +
Abstract
Planarization, conformal coating and etch selectivity are three key areas for successful fabrication of submicron interconnections, BCl3 and BCl3/N2 RIE (Reactive Ion Etch) are usually used to define high aspect ratio and fine edge submicron Al lines. Polymers have potential for being used as the insulator for multilevel interconnections, because of their low dielectric constants. Due to viscosity, it is difficult to coat the space between submicron metal lines with spin on formulations for polymers. Parylene is a family of conformal vapor depositable polymers with many attractive attributes, such as low dielectric constant (2.38 - 2.65), no outgassing or moisture uptake, room temperature deposition, low stress, good gap filling and local planarization properties. However, with this 'new' polymer insulator, selectivity becomes important for proper etch stop. In this paper the RIE etch selectivities of Al and parylene have been investigated and the selectivity explored to pattern micron feature size interconnections. The Al was deposited on parylene and patterned for studying etch selectivity. The planarization capability of parylene was also studied. It is demonstrated that high aspect ratio sub-micron trenches could be successfully conformally coated with parylene. The metal-polymer adhesion and diffusion characteristics are also examined; and low mechanical stress for the dielectric are demonstrated.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Zhang, S. Dabral, B. J. Howard, Joseph Bica, Chien Chiang, V. Ochoa, P. J. Ficalora, Christoph O. Steinbruchel, H. Bakhru, Toh-Ming Lu, and John F. McDonald "Parylene as a conformal insulator for submicron multilayer interconnection", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145463
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Cited by 3 scholarly publications.
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KEYWORDS
Aluminum

Etching

Coating

Dielectrics

Reactive ion etching

Metals

Diffusion

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