Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping

Emi Ishida; Karl-Josef Kramer; Thomas W. Sigmon; Kurt H. Weiner

doi:10.1117/12.142090

16 March 1993 Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping

Emi Ishida, Karl-Josef Kramer, Thomas W. Sigmon, Kurt H. Weiner

Author Affiliations +

Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142090
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Shallow junctions under silicide contact layers have been fabricated using a gas-phase dopant source and pulsed laser heating. A spatially homogenized 308 nm XeCl pulsed laser is used to drive adsorbed gas phase dopant species, e.g. BF₃, AsF₅, PF₅, into the silicide overlayers and to outdiffuse dopants into the silicon substrate. High interface concentrations (C_int > 10²⁰ atoms/cm³) and junctions < 1500 angstroms in depth have been obtained using this technique. Film/substrate interface roughness is unaffected by laser irradiation. Results from SIMS, RBS, and TEM analyses are presented in this paper.

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Emi Ishida, Karl-Josef Kramer, Thomas W. Sigmon, and Kurt H. Weiner "Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142090

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