Etching-related reverse short channel effect in buried channel P-MOSFET

Chorng Ping Chang; K. K. Ng; W. S. Lindenberger; Taeho H. Kook; Fred N. Preuninger; Avi Kornblit

doi:10.1117/12.139348

14 January 1993 Etching-related reverse short channel effect in buried channel P-MOSFET

Chorng Ping Chang, K. K. Ng, W. S. Lindenberger, Taeho H. Kook, Fred N. Preuninger, Avi Kornblit

Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139348
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

We have studied the effects of gate etching on the threshold voltage of submicron, N-poly gate CMOS devices through etch processing in selected advanced commercial etchers using a variety of etching chemistries. We found that the threshold voltage of the P-channel (buried channel) transistors is very sensitive to the etched profile of the gate. In the cases of reentrant and/or notched profiles, a reverse short channel phenomenon was observed. However, the etched profile has little effect on the threshold voltage of the N-channel transistors. A model is proposed to explain the mechanism of the reverse short channel phenomenon. Cross-sectional SEM and electrical measurements are used to support the model. The impact of this reverse short channel phenomenon on manufacturability and reliability for buried channel devices is also discussed.

Citation Download Citation

Chorng Ping Chang, K. K. Ng, W. S. Lindenberger, Taeho H. Kook, Fred N. Preuninger, and Avi Kornblit "Etching-related reverse short channel effect in buried channel P-MOSFET", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); https://doi.org/10.1117/12.139348

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