Selective diamond seed deposition using electroplated copper

Rajeshuni Ramesham

doi:10.1117/12.130756

20 November 1992 Selective diamond seed deposition using electroplated copper

Rajeshuni Ramesham

Proceedings Volume 1759, Diamond Optics V; (1992) https://doi.org/10.1117/12.130756
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

A process for selective seeding of conducting substrates (inolybdenun and copper) with submicron diamond particles has been studied. In this process, copper is electroplated through a photoresist mask, and the electroplating is performed in a stirred solution of CuSO4 and H2S04 into which O.l in size diamond particles have been added. This resulted in a continuous layer of diamond particles embedded in the electroplated copper. After the removal of photoresist, this layer has been used to seed further CVD (chemical vapor deposition) diamond growth selectively. Morphology and Raman analysis of both the as-plated copper/diamond matrix and the filir that resulted after further CVD diamond deposition have been reported.

Citation Download Citation

Rajeshuni Ramesham "Selective diamond seed deposition using electroplated copper", Proc. SPIE 1759, Diamond Optics V, (20 November 1992); https://doi.org/10.1117/12.130756

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