Semiconductor lasers and photodiodes for gas analysis in the spectral range 1.8-2.5 um

Alexej N. Baranov; Albert N. Imenkov; Maya P. Mikhailova; Yury P. Yakovlev

doi:10.1117/12.140316

1 April 1992 Semiconductor lasers and photodiodes for gas analysis in the spectral range 1.8-2.5 μm

Alexej N. Baranov, Albert N. Imenkov, Maya P. Mikhailova, Yury P. Yakovlev

Proceedings Volume 1724, Tunable Diode Laser Applications; (1992) https://doi.org/10.1117/12.140316
Event: Tunable Diode Laser Applications, 1993, Moscow, Russian Federation

Abstract

Semiconductor lasers and photodiodes for the 1.8-2.5 micron spectral range are described which can be used in gas analysis systems. The characteristics of pulsed lasers with output optical power reaching 1 W and low-threshold single-mode lasers are presented. The photodiodes have high quantum efficiency (0.6 without antireflection coating) and high speed or response (0.5 ns at reverse bias of several volts).

Citation Download Citation

Alexej N. Baranov, Albert N. Imenkov, Maya P. Mikhailova, and Yury P. Yakovlev "Semiconductor lasers and photodiodes for gas analysis in the spectral range 1.8-2.5 μm", Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); https://doi.org/10.1117/12.140316

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