Paper
1 April 1992 Femtosecond laser diagnostics of ultrafast laser-induced melting of the GaAs surface
Sergei V. Govorkov, Vladimir I. Emel'yanov, I. L. Shumay, Wolfgang Rudolph, Thomas Schroeder
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Proceedings Volume 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces; (1992) https://doi.org/10.1117/12.58640
Event: LAMILADIS '91: International Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, 1991, Chernivsti, Ukraine
Abstract
We report here the experimental results on the SHG and linear reflectivity studies of the dynamics of laser-induced melting of a GaAs surface layer under subpicosecond pulsed laser excitation. We find that the SH intensity drops in a time less than 100 fs after excitation, while the linear reflectivity reaches a value characteristic of molten GaAs on a time scale of about 1 ps. Thus, the experimental results unambiguously indicate that ultra-fast phase transition to a new solid phase with structural properties different both from that of initial material and that of molten GaAs takes place in the surface layer under strong femtosecond laser excitation. This transition occurs on a time scale of 100 fs which is about an order of magnitude less than the time required for the electron relaxation to the bottom of the conduction band.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergei V. Govorkov, Vladimir I. Emel'yanov, I. L. Shumay, Wolfgang Rudolph, and Thomas Schroeder "Femtosecond laser diagnostics of ultrafast laser-induced melting of the GaAs surface", Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); https://doi.org/10.1117/12.58640
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