In-situ monitoring for HgCdTe device fabrication

Patricia B. Smith; Glennis J. Orloff; Roger L. Strong

doi:10.1117/12.137778

12 August 1992 In-situ monitoring for HgCdTe device fabrication

Patricia B. Smith, Glennis J. Orloff, Roger L. Strong

Proceedings Volume 1683, Infrared Focal Plane Array Producibility and Related Materials; (1992) https://doi.org/10.1117/12.137778
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

In situ monitoring provides numerous advantages in the fabrication of HgCdTe-based infrared devices. Two in situ monitoring techniques are currently being investigated in our laboratory: optical emission spectroscopy (OES) and ellipsometry. OES is ideal for end point detection, for monitoring reactor integrity, and it also provides chemical information. Ellipsometry is a technique useful for the determination of film thickness and surface roughness. Process control can be readily achieved through the implementation of these two in situ measurement techniques. Examples of the use of OES for end point detection during the plasma etching of }fgCdTe and ZnS are discussed. In situ ellips.ometry is being pursued for monitoring the mild plasma etching of bromine/ methanol polished HgCdTe surfaces prior to in situ passivation and insulator deposition. To support the utility of in si.u ellipsoriietry, our initial studies using ex situ ellipsoinetry measurements of plasma etched HgCdTe are highlighted. The advantages of in situ monitoring for multistep vacuum processing, including contamination reduction and improved process control, are presented.

Citation Download Citation

Patricia B. Smith, Glennis J. Orloff, and Roger L. Strong "In-situ monitoring for HgCdTe device fabrication", Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); https://doi.org/10.1117/12.137778

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