Paper
21 October 1992 Effect of Al mole fraction on decay profile of photoinduced IR absorption and the determination of the critical value of xc for AlxGa1-xAs
Wubao B. Wang, Robert R. Alfano, David M. Szmyd, Arthur J. Nozik
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Abstract
The hot carrier dynamics in the satellite X valley in AlxGa1-xAs was measured by femtosecond pump-probe infrared absorption spectroscopy. The dynamics of the X valley electrons for samples with x = 0.439. The critical value of xc corresponding to the direct-to-indirect band gap transition for AlxGa1-xAs was determined to be 0.412 +/- 0.006.
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Wubao B. Wang, Robert R. Alfano, David M. Szmyd, and Arthur J. Nozik "Effect of Al mole fraction on decay profile of photoinduced IR absorption and the determination of the critical value of xc for AlxGa1-xAs", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137671
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KEYWORDS
Absorption

Aluminum

Independent component analysis

Electrons

Gallium

Infrared radiation

Scattering

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