Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

John L. Sturtevant; Steven J. Holmes; Paul A. Rabidoux

doi:10.1117/12.59753

1 June 1992 Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

John L. Sturtevant, Steven J. Holmes, Paul A. Rabidoux

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59753
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

In the processing of chemically amplified resist systems, two `dose' parameters must be considered. The exposure dose dictates the amount of photoacid generated, and the thermal dose that is administered during the post-exposure bake (PEB) governs the extent to which the resin is chemically transformed by the acid. An Arrhenius relationship exists between these two dose variables, and the magnitude of the effective activation energy determines the degree of PEB temperature control required for a particular linewidth budget. PEB characteristics are presented for a chemically amplified positive-tone DUV resist used by IBM in the manufacture of 0.5 micrometers 16 Mb DRAMs. The effect of PEB temperature and time on resist sensitivity, contrast, resolution, and process latitude is presented. The influence of exposure and thermal dose on the chemical contamination effect is also discussed.

Citation Download Citation

John L. Sturtevant, Steven J. Holmes, and Paul A. Rabidoux "Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59753

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