Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resist

Seong-Ju Kim; Byung-Sun Park; Haiwon Lee

doi:10.1117/12.59767

1 June 1992 Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resist

Seong-Ju Kim, Byung-Sun Park, Haiwon Lee

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59767
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

One:one alternating poly(p-trimethylgermylstyrene sulfone)s were obtained by tert- butylhydroperoxide initiated copolymerization of p-trimethylgermylstyrene with sulfur dioxide (SO2) at T < -60 degree(s)C. The molecular weight and polydispersity of the polysulfones were in the range of Mn equals 0.5 approximately 20 X 106 and Mw/Mn equals 1.8 approximately 5, respectively. The temperature of initial decomposition in nitrogen was 196 degree(s)C. Maximum UV absorption ((lambda) max) of the polysulfone was at 228 nm ((epsilon) max equals 16740 1/molcm of monomer unit). The polysulfone was found to be positive acting resists sensitive to x-ray ((lambda) c equals 18.5 angstrom) and electron beam.

Citation Download Citation

Seong-Ju Kim, Byung-Sun Park, and Haiwon Lee "Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resist", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59767

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