Tuning of read/write/erase processes in Electron Trapping Optical Memory media

Daniel T. Brower; Robert E. Revay

doi:10.1117/12.137529

13 August 1992 Tuning of read/write/erase processes in Electron Trapping Optical Memory media

Daniel T. Brower, Robert E. Revay

Proceedings Volume 1663, Optical Data Storage; (1992) https://doi.org/10.1117/12.137529
Event: Optical Data Storage Topical Meeting, 1992, San Jose, CA, United States

Abstract

The wavelengths of light used for the Read/Write/Erase processes in Electron Trapping Optical Memory have been shown to be tunable. Simulation and excitation efficiency spectra of nine samples of these IR stimulable phosphors were measured. Tuning was accomplished through compositional modifications of the ETOM^TM pseudobinary host lattice. The host lattice systems investigated were CaS, SrS, BaS, Sr_xCa_1-xS, and Sr_xBa_1-xS (0 <EQ X <EQ 1). Shifts in the read wavelength of over 125 nm and in the write wavelength of 5 nm were achieved.

Citation Download Citation

Daniel T. Brower and Robert E. Revay "Tuning of read/write/erase processes in Electron Trapping Optical Memory media", Proc. SPIE 1663, Optical Data Storage, (13 August 1992); https://doi.org/10.1117/12.137529

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