(InAs)1/(GaAs)4 superlattices strained quantum-well lasers

Naresh Chand; Niloy K. Dutta; John Lopata

doi:10.1117/12.59168

26 June 1992 (InAs)1/(GaAs)4 superlattices strained quantum-well lasers

Naresh Chand, Niloy K. Dutta, John Lopata

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59168
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

We report the fabrication and performance of (InAs)1 /(GaAs)4 short-period superlattices (SPS) strained quantum-well lasers emiuing near 1 jim. The (InAs)1 /(GaAs)4 superlattices is an ordered counterpart of 'NO.2Ga8As random alloy, and provides an alternative method of fabricating high speed electronic and photonic devices. The 0.96-mm-long devices have lased with a broad area threshold current density of 100 A cm 2 The 250-p.m long ridge waveguide lasers fabricated on the same wafer have a threshold current of 10 mA, an external differential quantum efficiency of 0.35 mW/mA/facet and have operated to a temperature of 200°C with a characteristic temperature T0 = l75K in the 2O°C to 8O°C range.

Citation Download Citation

Naresh Chand, Niloy K. Dutta, and John Lopata "(InAs)1/(GaAs)4 superlattices strained quantum-well lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59168

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available