High-frequency modulation of semiconductor laser amplifiers

Andrew M. Lomax; Ian H. White

doi:10.1117/12.59142

26 June 1992 High-frequency modulation of semiconductor laser amplifiers

Andrew M. Lomax, Ian H. White

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59142
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

Picosecond pulse amplification in modulated amplifiers is demonstrated with negligible pulse distortion for modulation frequencies between 1 and 4 0Hz. Existing measurements show that up to 2.5 GHz modulation can be achieved with a gate "on" time of 200 ps. A numerical model is reported which simulates the behaviour of diode laser amplifiers under RF current modulation and is shown to be in good agreementwith experimental demonstration. A simple analytical modelis also reported to indicate the physical causes in observed operating trends. It is shown that in optimized bulk devices, good modulation depth could potentially be achieved with a 100 ps gate "on" time at 5GHz modulation frequency.

Citation Download Citation

Andrew M. Lomax and Ian H. White "High-frequency modulation of semiconductor laser amplifiers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59142

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