Laser damage threshold measurements of AgGaSe2 crystal at 9 um

Madhu A. Acharekar; James L. Montgomery; Ronald J. Rapp

doi:10.1117/12.60090

29 July 1992 Laser damage threshold measurements of AgGaSe2 crystal at 9 um

Madhu A. Acharekar, James L. Montgomery, Ronald J. Rapp

Proceedings Volume 1624, Laser-Induced Damage in Optical Materials: 1991; (1992) https://doi.org/10.1117/12.60090
Event: Laser-Induced Damage in Optical Materials: 1991, 1991, Boulder, CO, United States

Abstract

Silver gallium selenide (AgGaSei) crystal for efficient second-harmonic-generation of C02 laser lines has been demonstrated using a pulsed laser. However, the use of this crystal in continuous wave (CW) lasers is limited due to its low laser damage threshold. In this paper, laser damage threshold measurements obtained using a 9 µm C02 laser will be discussed. The data obtained for the frequency doubling of 9 µm to 4.5 µm will be presented.

Citation Download Citation

Madhu A. Acharekar, James L. Montgomery, and Ronald J. Rapp "Laser damage threshold measurements of AgGaSe2 crystal at 9 um", Proc. SPIE 1624, Laser-Induced Damage in Optical Materials: 1991, (29 July 1992); https://doi.org/10.1117/12.60090

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available