Optically controlled characteristics of HEMT

B. B. Pal; H. Mitra; Dharmendra P. Singh; S. N. Chattopadhyay

doi:10.1117/12.636865

16 December 1992 Optically controlled characteristics of HEMT

B. B. Pal, H. Mitra, Dharmendra P. Singh, S. N. Chattopadhyay

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636865
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

The effect of optical radiation on the electrical characteristics of a HENT device has been carried out. Both photovoltaic effect in the metalsemiconductor junction and photogeneration of carriers in the space charge layer of n-A1GaAs HENT device have been taken into account. Offset voltage is found to decrease with flux density and active layer concentration. The drain current is observed to increase with the increase in radiation flux density photogeneration of electronhole pairs. The photovoltaic effect develops a forward voltage across the metalsemiconductor junction. In a A1GaAs/GaAs system the electrons and holes generated in nAlGaAs layer are separated out from each other by the field across the'' metalsemiconductor junction and heterointerface. Thus due to the additional charge carriers the charge density in 2DEG at the heterointerface of the HENT structure will be modified. The theory is given in the next section. Theory The optical HENT structure is shown in Fig. 1 . The region between the Schottky gate and the heterojunction interface is assumed to be totally depleted and the electrostatic potential v2 at the end of the semiconductor (x d2) is obtained by solving Poisson''s eqn. 2 - '' [N2(x) + n(x)(1) dx2 alongwith appropriate boundary condition N2(x) and 2 are the doping concentration and permittivity of n-A1GaAs layer. n(x) is the Photonic devices find a lot of applications in optical communication integrated optics and optical computer. High speed devices

Citation Download Citation

B. B. Pal, H. Mitra, Dharmendra P. Singh, and S. N. Chattopadhyay "Optically controlled characteristics of HEMT", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636865

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
4 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Field effect transistors

Semiconductors

Metals

Photovoltaics

Radiation effects

Interfaces

Photonic devices

Show All Keywords

Keywords/Phrases

Search In:

Publication Years