Laser drilling vias in GaAs wafers

Susan Riley; Larry A. Schick

doi:10.1117/12.51032

1 December 1991 Laser drilling vias in GaAs wafers

Susan Riley, Larry A. Schick

Proceedings Volume 1598, Lasers in Microelectronic Manufacturing; (1991) https://doi.org/10.1117/12.51032
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

A new approach to drilling GaAs substrate vias in a production environment is described. Rapid drilling of vias in thinned wafers has been achieved with a frequency doubled Nd:YAG laser. A description of the equipment, laser parameters, and process is given. Production results are also shown.

Citation Download Citation

Susan Riley and Larry A. Schick "Laser drilling vias in GaAs wafers", Proc. SPIE 1598, Lasers in Microelectronic Manufacturing, (1 December 1991); https://doi.org/10.1117/12.51032

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