Photoelectrochemical etching of n-InP producing antireflecting structures for solar cells

David Soltz; Lucila H. D. Cescato; Franco Decker

doi:10.1117/12.49229

1 December 1991 Photoelectrochemical etching of n-InP producing antireflecting structures for solar cells

David Soltz, Lucila H. D. Cescato, Franco Decker

Proceedings Volume 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X; (1991) https://doi.org/10.1117/12.49229
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Photoelectrochemical (PEC) etching of n-InP is studied as a method to engrave relief microstructures. Experiments of PEC were performed with holographic exposures ((lambda) equals 0.4579 micrometers ) and homogeneous white light on n-InP. The triangular profile characteristic of holographic patterns recorded parallel to the <011> direction appeared even when the sample was etched using homogeneous white light. In this case deep random microstructures were obtained that present interesting anti-reflecting properties that may be useful in solar cells applications.

Citation Download Citation

David Soltz, Lucila H. D. Cescato, and Franco Decker "Photoelectrochemical etching of n-InP producing antireflecting structures for solar cells", Proc. SPIE 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X, (1 December 1991); https://doi.org/10.1117/12.49229

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