Close-spaced vapor transport of II-VI semiconductors

Gerard Perrier

doi:10.1117/12.49228

1 December 1991 Close-spaced vapor transport of II-VI semiconductors

Gerard Perrier

Proceedings Volume 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X; (1991) https://doi.org/10.1117/12.49228
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

The close spaced vapor transport (CSVT) is an efficient and cost-effective technique that allows the growth of polycrystalline as well as epitaxial thin layers of semiconductors. It has been applied to II-VI materials, especially to zinc and cadmium chalcogenides. A summary table including the deposition parameters, i.e., the nature of the ambient gas, the temperature of the source, the temperature difference between source and substrate, and the values of the growth rates measured on various substrates is presented for ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe. Experimental results concerning the growth of ZnSe on GaAs substrates are also reported. The CSVT system uses an Ar atmosphere and the working temperature is ca. 825 degree(s)C. The temperatures of source and substrate are measured during deposition and growth rates of the ZnSe films are studied as a function of the reciprocal temperature of the substrate surface for GaAs and quartz (inert) substrates. The measured values of the growth rate are compared to the theoretical ones given by the reaction-limited model and the diffusion-limited model. The validity of the models is discussed in terms of the nature of the molecules participating in the transport.

Citation Download Citation

Gerard Perrier "Close-spaced vapor transport of II-VI semiconductors", Proc. SPIE 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X, (1 December 1991); https://doi.org/10.1117/12.49228

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