Tools for defect characterization in semiconductor devices: EBIC and voltage contrast

M. Natarajan; V. K. Vaidyan; M. K. Radhakrishnan

doi:10.1117/12.57020

1 February 1992 Tools for defect characterization in semiconductor devices: EBIC and voltage contrast

M. Natarajan, V. K. Vaidyan, M. K. Radhakrishnan

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57020
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

The scanning electron microscope has been widely recognized as one of the most important surface analytical instruments by providing a higher resolution morphology and composition of surfaces. The instrument also provides a unique feature of assessing the electrical operation of the complex devices using the electron beam induced current and voltage contrast modes of operation.

Citation Download Citation

M. Natarajan, V. K. Vaidyan, and M. K. Radhakrishnan "Tools for defect characterization in semiconductor devices: EBIC and voltage contrast", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57020

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