Kinetics of thermal donors and new oxygen donors in silicon

D. Tandon; Shyam Singh

doi:10.1117/12.57014

1 February 1992 Kinetics of thermal donors and new oxygen donors in silicon

D. Tandon, Shyam Singh

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57014
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

A model for the oxygen-related donors in Cz-silicon with emphasis on their generation, reduction, and subsequent behavior in the transition region has been developed. A modified SiO_x model is presented to account for the new oxygen donors. A schematic diagram of the formation of donors and related defects so developed in silicon from the un-annealed to the annealed stage is also given.

Citation Download Citation

D. Tandon and Shyam Singh "Kinetics of thermal donors and new oxygen donors in silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57014

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