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The lecture is introduced by a survey ofselJdffusion ofSi, which gives access to the
nature of the most probable point deftcts. The major results on the diffusion of the main
electron donors and acceptors are then summarized. The metallic impurities which can play
a crucial role in the Silicon technology are also consit'kred. Their extraordinary fast
dffusivity is tentatively explained. On the other hand, dfusion methods are also proposed
to remove those metals (gettering). The latest experimental and simulation results of
diffusion ofhydrogen and oxygen arefinally reported.
Francois Beniere
"Diffusion Studies In Silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.634081
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Francois Beniere, "Diffusion Studies In Silicon," Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.634081