Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films

S. S.V. Avadhani; S. Kasi Viswanathan; B. S. V. Gopalam

doi:10.1117/12.57034

1 February 1992 Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films

S. S.V. Avadhani, S. Kasi Viswanathan, B. S. V. Gopalam

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57034
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Thermal oxides on polycrystalline GaAs thin films are grown at 10^-04 Torr and 600 K. The oxide layers are studied by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). The core level spectra of Ga and As are obtained at different takes of angles. The oxide content of the films was found to increase with a decrease in the take of angle. The As₂O₃ content was found to be less than that of Ga₂O₃.

Citation Download Citation

S. S.V. Avadhani, S. Kasi Viswanathan, and B. S. V. Gopalam "Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57034

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