ZnS:Mn thin film electroluminescent display devices using hafnium dioxide as insulating layer

C. T. Hsu; Jiin Wen Li; C. S. Liu; Yan-Kuin Su; Tong S. Wu; Meiso Yokoyama

doi:10.1117/12.47283

1 November 1991 ZnS:Mn thin film electroluminescent display devices using hafnium dioxide as insulating layer

C. T. Hsu, Jiin Wen Li, C. S. Liu, Yan-Kuin Su, Tong S. Wu, Meiso Yokoyama

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47283
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The ac thin film EL possesses the properties of high resolution, compact, high brightness, and large area, etc. One of the important subjects is the choice of dielectric materials for use in ACTFEL displays. In this paper we discuss the electrical and optical performances of EL devices with BaTiO₃, Ta₂O₅, Al₂O₃, and HfO₂ as insulating layers. From the results, we find that EL devices with a glass/ITO/BaTiO₃/ZnS:Mn/HfO₂/Ta₂O₅/HfO₂/Al structure are excellent in brightness and efficiency.

Citation Download Citation

C. T. Hsu, Jiin Wen Li, C. S. Liu, Yan-Kuin Su, Tong S. Wu, and Meiso Yokoyama "ZnS:Mn thin film electroluminescent display devices using hafnium dioxide as insulating layer", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47283

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