Study of the chemically amplifiable resist materials for electron-beam lithography

Hiroo Koyanagi; Shin'ichi Umeda; Seiki Fukunaga; Tomoyuki Kitaori; Kohtaro Nagasawa

doi:10.1117/12.46383

1 June 1991 Study of the chemically amplifiable resist materials for electron-beam lithography

Hiroo Koyanagi, Shin'ichi Umeda, Seiki Fukunaga, Tomoyuki Kitaori, Kohtaro Nagasawa

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46383
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

As generally accepted, the chemically amplified resist system is one of the most promising candidates for a finer lithography. Our experimental results indicate that some of chemically amplified resist systems have drawbacks to be improved, however, especially in the sensitivity dependency on linewidth and in shelf life. This paper describes an improved resist system for electron beam lithography comprising polyvinylphenol, alkoxymethylbenzoguanamine, and triharomethylarylsulfone. Under optimization both in the resist formulation and processing, it has been shown that the resist system had a consistent sensitivity of 1.2 (mu) C/cm2 for a 0.15 micrometers and 2 micrometers line-and-space pattern, for instance, and that a shelving of the resist system for over three months at ambient temperature (25 C) gave rise to hardly any sign of change in its performance.

Citation Download Citation

Hiroo Koyanagi, Shin'ichi Umeda, Seiki Fukunaga, Tomoyuki Kitaori, and Kohtaro Nagasawa "Study of the chemically amplifiable resist materials for electron-beam lithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46383

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