Paper
1 August 1991 DESIRE technology with electron-beam resists: fundamentals, experiments, and simulation
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Abstract
The paper deals with the application of DESIRE techniques on e-beam lithography. The authors propose the basic statements for designing e-beam resists in order to apply properly the silylation method. The preliminary experiments with the designed resist prove the silylation capabilities of PMMA/P(tert-Butyl)MA copolymer. A mathematical model is built which emphasizes the role of Tg in diffusion. The simulation results are presented.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan V. Nicolau, Florin Fulga, and Mircea V. Dusa "DESIRE technology with electron-beam resists: fundamentals, experiments, and simulation", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.28466
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KEYWORDS
Diffusion

Polymers

Lithography

Silicon

Manganese

X-ray lithography

Manufacturing

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