Paper
1 July 1991 InGaAs/InP distributed feedback quantum-well lasers
Henryk Temkin, Ralph A. Logan, Tawee Tanbun-Ek
Author Affiliations +
Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43796
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
InGaAs/InP multiquantum well distributed feedback (DFB) lasers with the active layer based on either lattice matched or strained quantum wells are described. The active layer wells are placed in a carefully optimized graded index waveguide structure with very low internal loss. Buried heterostructure Fabry-Perot lasers based on these structures show low threshold current, high quantum efficiency and power output. These characteristics are to a large extent retained in distributed feedback lasers, with the DFB lasers showing mode rejection ratios as high as 50 dB and linewidths as low as 440 kHz. Transmission experiments at 1.7 Gb/s demonstrated dynamic chirp penalty a factor of 8-10 smaller than in conventional lasers.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henryk Temkin, Ralph A. Logan, and Tawee Tanbun-Ek "InGaAs/InP distributed feedback quantum-well lasers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43796
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Laser damage threshold

Semiconductor lasers

Laser applications

Quantum wells

Waveguides

Heterojunctions

Quantum efficiency

RELATED CONTENT


Back to Top