Advanced InGaAs/InP p-type pseudomorphic MODFET

Eric Malzahn; Michael Heuken; Detlev A. Gruetzmacher; M. Stollenwerk; Klaus Heime

doi:10.1117/12.24542

1 February 1991 Advanced InGaAs/InP p-type pseudomorphic MODFET

Eric Malzahn, Michael Heuken, Detlev A. Gruetzmacher, M. Stollenwerk, Klaus Heime

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24542
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A new layer structure is investigated which consists of an In(x)Ga(1-x)As (x in the range 0.57-0.75) channel embedded in Zn-doped InP grown on an InP substrate by low pressure-MOVPE. Increasing spacer thickness leads to an increasing Hall mobility and a decreasing sheet carrier density. Photoluminescence measurements at 2 K show the high quality of the quantum wells. A transistor (2.0 x 60 microns) with Ni/AuZn/Ni ohmic contacts and a Ti/Pt/Au Schottky-gate shows a room temperature extrinsic transconductance of 11.5 mS/mm.

Citation Download Citation

Eric Malzahn, Michael Heuken, Detlev A. Gruetzmacher, M. Stollenwerk, and Klaus Heime "Advanced InGaAs/InP p-type pseudomorphic MODFET", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24542

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