Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications

Maya P. Mikhailova; Alexej N. Baranov; Albert N. Imenkov; Yury P. Yakovlev

doi:10.1117/12.24430

1 March 1991 Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications

Maya P. Mikhailova, Alexej N. Baranov, Albert N. Imenkov, Yury P. Yakovlev

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24430
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Staggered-''lineup type II heterojunctions have been realized in Ga In As Sb solid solutions lattice matched. to GaSb as well as ones depending on alloy composition (x1 O. 23 or XinO8O)i n Unique features of type II heterojunctions due to carrier localization and spatial separation on the interface have been experixnen tally observed by electroluminescence generation of coherent radiation and photocurrent gain. Distinctive hallmarks of the narrow-''gap GaSbGaInAsSb heterojunctions have been considered in connection with CV 1-. V and spectral response experiments. Energy band schemes of such structures have been analized. GaSbGaInAsSb heterojunctions with x 0. 80 were found to be type II misaligned ones. Novel optoelectronic devices for midIR spectral range of 1 (lasers LID''s and high-. speed photodiodes) were developed on the base of GaSb-GaInAsSb heterojunctions.

Citation Download Citation

Maya P. Mikhailova, Alexej N. Baranov, Albert N. Imenkov, and Yury P. Yakovlev "Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24430

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