Paper
1 March 1991 Properties of ZnSe/ZnS grown by MOVPE on a rotating substrate
Joerg Soellner, Michael Heuken, Klaus Heime
Author Affiliations +
Abstract
In this work we will report the growth of ZnSe and ZnS grown by atmospheric pressure MOVPE with a rotating substrate which allows a very good thickness homogeneity of the layers. As reactants diethylzinc dimethyizinc diethylselenide and H2S and as carrier gas H2 was used. High mobilities and low background doping concentrations (i3ooK 370 cm2/Vs n3(JK 7x 1014 cm3) sharp excitonic PL features and very thin (2nm) ZnS/ZnSe multilayer structures demonstrate the facilities of this growth technique.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joerg Soellner, Michael Heuken, and Klaus Heime "Properties of ZnSe/ZnS grown by MOVPE on a rotating substrate", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24323
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Cited by 11 scholarly publications.
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KEYWORDS
Zinc

Optoelectronic devices

Gallium arsenide

Diffusion

Crystals

Lithium

Doping

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