Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy

Henri Banvillet; E. Gil-Lafon; A. M. Vasson; R. Cadoret; A. Tabata; Taha Benyattou; Gerard Guillot

doi:10.1117/12.24324

1 March 1991 Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy

Henri Banvillet, E. Gil-Lafon, A. M. Vasson, R. Cadoret, A. Tabata, Taha Benyattou, Gerard Guillot

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24324
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

InAs/InP quantum well (QW) structures are grown on InP substrates by hydride vapor phase epitaxy (HYPE) in a continuous mCi H2 HC1 flow with alternate supply of AsH3 and PH3. Photoluminescence peaks due to InAs QW are clearly detected with the higher energy ever reported (1. 23 eV) and with very good value for the full half width maximum (FHWM up to 1 3 meV). The evolution of the peak emission as a function of thickness leads us to determine a critical thickness of 7-8 ML for the InAs/InP system.

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Henri Banvillet, E. Gil-Lafon, A. M. Vasson, R. Cadoret, A. Tabata, Taha Benyattou, and Gerard Guillot "Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24324

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