Paper
1 October 1990 Laser induced chemical processing of electronic materials
Mikio Takai, Susumu Namba
Author Affiliations +
Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23727
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan
Abstract
Laser induced maskless etching has been applied to compound semiconductors and ceramics. Maximum etching rates ranging from 0. 1 tim/s to 850 tim/s with a minimum width of submicron depending on etching reaction were obtained. In-situ deposition and fluorescence were found to take place for thermochemical etching of compound semiconductors in CC14 atmospheres in which a minimum temperature rise necessary for etching reaction was clarified. Stoichiometry change and residual damage after etching were observed by microprobe photoluminescence and Raman scattering measurement. Laser chemical processing could for the first time be applied to magnetic head fabrication using Mn-Zn ferrite. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikio Takai and Susumu Namba "Laser induced chemical processing of electronic materials", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); https://doi.org/10.1117/12.23727
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KEYWORDS
Etching

Chemical lasers

Gallium arsenide

Laser processing

Plasma

Semiconductor lasers

Wet etching

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