Achieving efficient optoelectronic conversion through the integration of PtTe2 and nanostructured silicon

Yuequan Wu; Changbin Nie; Xingzhan Wei

doi:10.1117/12.3027205

31 December 2024 Achieving efficient optoelectronic conversion through the integration of PtTe₂ and nanostructured silicon

Yuequan Wu, Changbin Nie, Xingzhan Wei

Author Affiliations +

Proceedings Volume 13487, Optics and Photonics International Congress 2024; 134870E (2024) https://doi.org/10.1117/12.3027205
Event: Optics and Photonics International Congress, 2024, Yokohama, Japan

Abstract

Dirac semimetallic materials have emerged as promising candidates for advancing optoelectronic devices, owing to their distinctive properties in broadband response. Nevertheless, a noteworthy limitation resides in the thickness of these materials, which limits their light absorption capability and device responsivity. In this context, we introduce an experimental method for integrating PtTe₂ and nanostructured silicon. The introduction of pillar-structured silicon enhances the interaction between light and PtTe₂, thereby improving the device's photoresponsivity. Remarkably, under 1550 nm light irradiation, the devices with nanostructured silicon display a consistent and stable photoresponse, demonstrating an approximate 20-fold enhancement in photocurrent compared to the counterparts with planar silicon. This finding provides valuable insights for the development of high-performance optoelectronic devices.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yuequan Wu, Changbin Nie, and Xingzhan Wei "Achieving efficient optoelectronic conversion through the integration of PtTe₂ and nanostructured silicon", Proc. SPIE 13487, Optics and Photonics International Congress 2024, 134870E (31 December 2024); https://doi.org/10.1117/12.3027205

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