GaAs/AlGaAs multiquantum well IR detectors

Masatoshi Kobayashi; Masahiko Nakanishi; Y. Notani; K. Aono; Yoshiharu Komine; Wataru Susaki

doi:10.1117/12.23078

1 November 1990 GaAs/AlGaAs multiquantum-well IR detectors

Masatoshi Kobayashi, Masahiko Nakanishi, Y. Notani, K. Aono, Yoshiharu Komine, Wataru Susaki

Proceedings Volume 1341, Infrared Technology XVI; (1990) https://doi.org/10.1117/12.23078
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

GaAs/Al(0.31)Ga(0.69)As IR detector of multiquantum well structure with a single bound state in a GaAs well have been fabricated. The peak wavelength of spectral responsivity at 77 K was 8.3 microns. The measured responsivities were 20 V/W for A-type detectors, 65 V/W for B-type detectors, and 130 V/W for C-type detectors. The corresponding specific detectivities at peak wavelength were 2.8 x 10 exp 9 cm sq rt Hz/W, 2.7 x 10 exp 9 cm sq rt Hz/W, and 2.7 x 10 exp 9 cm sq rt Hz/W, respectively. These values are about one order lower than those of conventional CdHgTe photoconductive devices.

Citation Download Citation

Masatoshi Kobayashi, Masahiko Nakanishi, Y. Notani, K. Aono, Yoshiharu Komine, and Wataru Susaki "GaAs/AlGaAs multiquantum-well IR detectors", Proc. SPIE 1341, Infrared Technology XVI, (1 November 1990); https://doi.org/10.1117/12.23078

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