The damage effects and analysis of nanosecond pulse laser irradiation on triple junction GsAs solar cells

Jie Peng; Qianqian Wang; Tong Yue; Yuehong Hu; Wantao Deng; Huan Yang

doi:10.1117/12.3033821

4 December 2024 The damage effects and analysis of nanosecond pulse laser irradiation on triple junction GsAs solar cells

Jie Peng, Qianqian Wang, Tong Yue, Yuehong Hu, Wantao Deng, Huan Yang

Author Affiliations +

Proceedings Volume 13283, Conference on Spectral Technology and Applications (CSTA 2024); 132830M (2024) https://doi.org/10.1117/12.3033821
Event: Conference on Spectral Technology and Applications (CSTA 2024), 2024, Dalian, China

Abstract

In order to study the damage effects of triple junction GsAs solar cell under the high energy pulse laser radiation, a irradiation effects experiment utilizing a 1064nm nanosecond pulse laser as the intense light source was carried out. When the solar cell was irradiated by a nanosecond pulse laser with a single pulse energy density of 0.3J/cm² , the maximum output power of the solar cell decreases with the accumulated pulse energy increases. During the experiment, it was found that the phenomenon of nanosecond laser irradiation on triple junction gallium arsenide solar cells was significantly different from that of continuous wave（CW）laser irradiation. Firstly, viewing from outside, there’s almost no significant changes were observed in the appearance of solar cells before and after the pulse laser irradiation. But the CW laser caused significant changes in the morphology of solar cells, even bursting. Secondly, by summarizing the I-V curves measured before and after the pulse laser irradiation, the open circuit voltage and fill factor were obviously decreased after the irradiation, and the short-circuit current remains almost unchanged before the solar cell is 100% no-output. This is different from the phenomenon reported in literature that CW laser irradiation induced an increase on short-circuit current in triple junction GaAs solar cell. Based on this phenomenon, the damage mechanism of nanosecond pulse laser on triple junction GaAs solar cells was analyzed from the aspects of volt ampere characteristics, equivalent circuit and damage of sub battery.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jie Peng, Qianqian Wang, Tong Yue, Yuehong Hu, Wantao Deng, and Huan Yang "The damage effects and analysis of nanosecond pulse laser irradiation on triple junction GsAs solar cells", Proc. SPIE 13283, Conference on Spectral Technology and Applications (CSTA 2024), 132830M (4 December 2024); https://doi.org/10.1117/12.3033821

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Solar cells

Laser irradiation

Pulsed laser operation

Batteries

Gallium arsenide

Continuous wave operation

Laser induced damage

Show All Keywords

Keywords/Phrases

Search In:

Publication Years