Paper
10 October 2024 On-chip reconfigurable mode converter by rectangle Sb2S3 inlaid in 4H-SiC
Author Affiliations +
Proceedings Volume 13278, Seventh Global Intelligent Industry Conference (GIIC 2024); 132780T (2024) https://doi.org/10.1117/12.3032359
Event: Seventh Global Intelligent Industry Conference (GIIC 2024), 2024, Shenzhen, China
Abstract
Antimony sesquisulfide Sb2S3, an emerging low-loss phase change material, has attracted great interest for its unique properties, enabling its huge potential applications in programmable integrated optics. A reconfigurable mode converter is proposed and demonstrated numerically assisted by a rectangle Sb2S3 inlaid in a slab 4H-SiC waveguide. A threedimension finite-difference time-domain (3D FDTD) method is employed to simulate and optimize the proposed structure. The TM0-to-TM1 mode conversion is realized with transmittances (T) of 0.91 and mode purity (MP) of 93% at the wavelength of 1550 nm in the crystalline Sb2S3 state. When the Sb2S3 is switched to the amorphous state, the mode-conversion effect disappears, and the incident TM0 mode propagates unimpededly with T > 0.99 and MP > 97.64% within the waveband from 1500 nm to 1600 nm. The nonvolatile reconfigurable mode converter can contribute to programmable photonic integrated circuits and neuromorphic optical computing.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Danfeng Zhu, Zening Liao, Junbo Chen, Shaobin Qiu, Dingnan Deng, and Han Ye "On-chip reconfigurable mode converter by rectangle Sb2S3 inlaid in 4H-SiC", Proc. SPIE 13278, Seventh Global Intelligent Industry Conference (GIIC 2024), 132780T (10 October 2024); https://doi.org/10.1117/12.3032359
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KEYWORDS
Antimony

Silicon carbide

Waveguides

Finite-difference time-domain method

Integrated optics

Switching

Transmittance

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