Poster
13 November 2024 Through pitch line width difference minimization by pixel source optimization
Author Affiliations +
Conference Poster
Abstract
Through the adoption of EUV lithography and an increase in numerical aperture (NA), smaller and more complex patterns can now be achieved through single exposure while significantly enhancing throughput. However, due to the variations in pattern shapes and densities, optical proximity correction (OPC) is required, leading to increased computational costs. This study aims to reduce line width variation on wafers and minimize OPC through source optimization. The process was performed under 0.33NA and 0.55NA conditions with a low-n absorbent material. The target pattern was a line and space pattern, focusing on making the same line width among various pitches. High pattern fidelity could be achieved by optimizing the source, while maintaining sufficient imaging performance.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Min-Woo Kim, Da-Kyung Yu, Yu-Jin Chae, Hee-Chang Ko, Ji-Won Kang, Michael Yeung, Seung-Woo Son, and Hye-Keun Oh "Through pitch line width difference minimization by pixel source optimization", Proc. SPIE 13216, Photomask Technology 2024, (13 November 2024); https://doi.org/10.1117/12.3037354
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KEYWORDS
Critical dimension metrology

Optical proximity correction

Nanoimprint lithography

Printing

Cadmium

Optical lithography

EUV optics

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