Source optimization for the whole arc slit with minimum optical proximity correction applied to contact hole patterns

Da-Kyung Yu; Min-Woo Kim; Gug-Yong Kim; Yu-Jin Chae; Seoung-woo Son; Michael Yeung; Hye-Keun Oh

doi:10.1117/12.3036974

12 November 2024 Source optimization for the whole arc slit with minimum optical proximity correction applied to contact hole patterns

Da-Kyung Yu, Min-Woo Kim, Gug-Yong Kim, Yu-Jin Chae, Seoung-woo Son, Michael Yeung, Hye-Keun Oh

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 132151A (2024) https://doi.org/10.1117/12.3036974
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Conference Poster

Abstract

High-NA EUV lithography is essential for advanced semiconductor manufacturing, particularly for DRAM contact hole patterning. One of the primary challenges in High-NA systems is the intensity variation between the center and edges of the slit. Additionally, critical dimension differences in the x and y directions are further complicated by anamorphic optics and arc-slit illumination configurations, adding to the overall process complexity in High-NA lithography. To address these challenges, we conducted source optimization using a rigorous lithography simulation tool for contact hole patterns, with whole arc-slit configuration. This optimization, considering the full arc-slit effect, successfully reduced intensity variation across the slit. Further refinement in pattern fidelity through threshold level light intensity adjustments improved process margins for both vertical and horizontal patterns. By minimizing the need for optical proximity correction and mask bias, our approach simplifies the pattern transfer process from mask to wafer, enhancing accuracy. Additionally, source optimization combined with precise illumination control significantly improves the process window, particularly when dealing with the arc-slit configuration, facilitating the manufacturability of DRAM patterns in high NA EUV lithography.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Da-Kyung Yu, Min-Woo Kim, Gug-Yong Kim, Yu-Jin Chae, Seoung-woo Son, Michael Yeung, and Hye-Keun Oh "Source optimization for the whole arc slit with minimum optical proximity correction applied to contact hole patterns", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 132151A (12 November 2024); https://doi.org/10.1117/12.3036974

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