OPC and modeling solution to support 0.55NA EUV stitching

Qinglin Zeng; Dongbo Xu; Xuefeng Zeng; Werner Gillijns; Edita Tejnil; Yuyang Sun; Germain Fenger

doi:10.1117/12.3034957

12 November 2024 OPC and modeling solution to support 0.55NA EUV stitching

Qinglin Zeng, Dongbo Xu, Xuefeng Zeng, Werner Gillijns, Edita Tejnil, Yuyang Sun, Germain Fenger

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 1321507 (2024) https://doi.org/10.1117/12.3034957
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

The new high numerical aperture (0.55NA) Extreme Ultraviolet Lithography (EUVL) machine has been developed by ASML, which is using an anamorphic projection system with the demagnification of 4× in x-direction and 8× in y-direction. Due to the unchanged 6-inch mask, 0.55NA EUVL reduces the exposure field size to half-field (26×16.5mm²). Therefore, the in-die stitching between two exposures might be needed for the applications requiring larger than half-field size. To enable High-NA EUV in die stitching, a complete mask data correction flow is needed. In this paper, we will investigate the in-die stitching effects and solution by using Ta-based dark field mask. We will show the impact of pattern types and decomposition rules on the stitching strategy, in addition to methods for correcting these stitching effects in optical proximity correction from an EDA perspective.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Qinglin Zeng, Dongbo Xu, Xuefeng Zeng, Werner Gillijns, Edita Tejnil, Yuyang Sun, and Germain Fenger "OPC and modeling solution to support 0.55NA EUV stitching", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 1321507 (12 November 2024); https://doi.org/10.1117/12.3034957

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