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26 August 2024 A proof of concept for hybrid nano-imprint lithography
T. Nakasugi, K. Fukuhara
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Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 1317707 (2024) https://doi.org/10.1117/12.3032401
Event: Photomask Japan 2024, 2024, Yokohama, Japan
Abstract
Nano-imprint lithography (NIL) offers unique advantages, such as the ability to achieve patterning at 1x nm, threedimensional patterning, and low energy consumption. The throughput of NIL using a spin-coating resist has been able to exceed 120 wph. However, spin-coating NIL faces the issue of varying residual film under the resist pattern depending on the pattern density. To address this problem, we propose a hybrid NIL (HB-NIL) that combines spin-coating NIL with jet and flash imprint lithography. In this paper, we will present the results of evaluating the patterning performance of HB-NIL and discuss its feasibility based on the experimental findings.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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T. Nakasugi and K. Fukuhara "A proof of concept for hybrid nano-imprint lithography", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 1317707 (26 August 2024); https://doi.org/10.1117/12.3032401
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KEYWORDS
Nanoimprint lithography
Film thickness
Ultraviolet radiation
Lithography
Photoresist processing
Etching
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