This article mainly studies the current voltage (IV) characteristics of Quantum Well Infrared Photo-detectors, especially the influence of temperature on their performance, as well as the characteristics related to photocurrent and dark current. We measured the IV curves at different temperatures and conducted comparative studies to reveal the differences in the behavior of quantum well devices under photoexcitation and non photoexcitation conditions, in order to gain a deeper understanding of their performance characteristics. Finally, we investigated the response of quantum well devices to different blackbody temperatures and fitted the dark current using the IV curve, which was compared with the actual measured dark current. The results show that the fitted dark current is slightly larger than the actual measured dark current. Through these studies, we can comprehensively understand the IV characteristics of quantum well devices under different temperature and lighting conditions, providing strong support for their optimization and control in various applications. These research results are of great significance for the design and engineering applications of QWIP.
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